Gate-tunable high mobility remote-doped InSb/In12xAlxSb quantum well heterostructures

Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well heterostructures

Electrical and Material Properties of Strained Silicon/Relaxed Silicon Germanium Heterostructures for Single-Electron Quantum Dot Applications

A single-electron quantum dot device is an ideal environment to demonstrate the concept of a spin-based quantum bit, a promising candidate to realize a quantum computer. Two-dimensional electron gases (2DEGs) in silicon/silicon germanium heterostructures have been considered as a potential platform to fabricate singleelectron quantum dots for spin manipulations because silicon has an inherently...

Zero-field spin splitting and spin-dependent broadening in high-mobility InSb ÕIn1−xAlxSb asymmetric quantum well heterostructures

We present high-field magnetotransport data from a range of 30-nm-wide InSb/InAlSb quantum wells with room-temperature mobilities in excess of 6 m2 V−1 s−1. Samples with the narrowest Landau level broadening exhibit beating patterns in the magnetoresistance attributed to zero-field spin splitting. Rashba parameters are extracted from a range of samples and gate biases using the difference in sp...

Study of factors limiting electron mobility in InSb quantum wells

We observe a significant increase in InSb quantum-well mobility when remote doping of Al0.09In0.91Sb barriers is accomplished by three layers, rather than one layer, of Si d doping. At 7 K, the electron mobility in single quantum-well structures grown on GaAs substrates is as high as 280 000 cm/V s with an electron density of 2.33310 cm. The density of oriented abrupt steps and square-mound fea...

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains chal...